Method of forming protective film for semiconductor device

专利摘要:
A nitride film is mainly used as a protective film of a semiconductor device. Since the nitride film does not have perfect physical properties and causes problems such as cracking, a titanium device is added to the nitride film to improve strength, thermal stability, and resistance to the outside. A method of forming a protective film is disclosed.
公开号:KR19980053437A
申请号:KR1019960072541
申请日:1996-12-26
公开日:1998-09-25
发明作者:박상종
申请人:김주용；현대전자산업 주식회사；
IPC主号:

专利说明:

Method of forming protective film for semiconductor device
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a protective film of a semiconductor device, and more particularly, to a method of forming a protective film of a semiconductor device for preventing cracks in a protective film and improving resistance to external environments.
In general, a protective film for protecting a semiconductor device in a semiconductor manufacturing process is used by depositing different materials in two layers. A conventional method of forming a protective film of a semiconductor device will be described with reference to the accompanying drawings.
The accompanying drawings are cross-sectional views of a state in which the first protective film 3 and the second protective film 4 are sequentially formed on the entire upper surface after the metal layer 2 is patterned on the silicon substrate 1 through a predetermined process. In this case, the first protective film 3 uses an oxide film for the purpose of preventing pressure, and the second protective film 4 uses a nitride film in terms of strength, thermal stability, and resistance to the external environment. However, the nitride film has a problem in that cracks are generated and yield is reduced and reliability is lowered.
Accordingly, an object of the present invention is to provide a method for forming a protective film for a semiconductor device capable of solving the above problem by adding titanium nitride to a nitride film as a second protective film.
The present invention for achieving the above object is a step of forming a metal layer pattern on the silicon substrate through a predetermined process and then forming an insulating film on the entire upper surface, and forming a silicon nitride film added with titanium nitride on the entire insulating film It is characterized by consisting of steps.
The attached drawing is sectional drawing of the element for demonstrating the protective film formation method of a semiconductor element.
* Description of the symbols for the main parts of the drawings *
1: silicon substrate 2: metal layer
3: first protective film 4: second protective film
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
The accompanying drawings are cross-sectional views of a state in which the insulating film 3 and the silicon nitride film 4 are sequentially formed on the entire upper surface after the metal layer 2 is patterned on the silicon substrate 1 in a predetermined process. ), An oxide film is used for the purpose of preventing pressure, and titanium nitride is added to the silicon nitride film 4. In addition, the insulating film and the silicon nitride film 4 are formed by a chemical vapor deposition method using plasma.
As described above, the titanium nitride is added to the silicon nitride film, which is a protective film of the semiconductor device, to increase the ionic bond content and to strengthen the nitride film structure due to the lateral vibration of silicon and titanium. Therefore, the thermal expansion coefficient of the silicon nitride film is reduced to generate a strong compressive stress on the surface of the silicon nitride film to further increase the strength, and also to improve the thermal shock resistance and thermal stability, thereby increasing the overall strength of the protective film.

权利要求:
Claims (3)
[1" claim-type="Currently amended] Forming a metal layer pattern on the silicon substrate through a predetermined process and then forming an insulating film on the entire upper surface;
Forming a silicon nitride film containing titanium nitride on the entire insulating film.
[2" claim-type="Currently amended] The method of claim 1, wherein the insulating layer is formed by a chemical vapor deposition method using plasma.
[3" claim-type="Currently amended] The method of claim 1, wherein the titanium nitride film to which the titanium nitride is added is formed by a chemical vapor deposition method using plasma.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
1996-12-26|Application filed by 김주용, 현대전자산업 주식회사

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1996-12-26|Priority to KR1019960072541A

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1998-09-25|Publication of KR19980053437A

优先权:

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申请号 | 申请日 | 专利标题

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KR1019960072541A|KR19980053437A|1996-12-26|1996-12-26|Method of forming protective film for semiconductor device|